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r 201604i 1/18 n ??? n-channel mosfet JCS7HN65C order codes ? marking ? package halogen free ? packaging device weight jcs7hn65vc-o-v-n-b jcs7hn65v ipak no tube 0.35 g(typ) jcs7hn65vc-o-v2-n-b jcs7hn65v ipak-s2 no tube 0.34 g(typ) jcs7hn65rc-o-r-n-b jcs7hn65r dpak no tube 0.30 g(typ) jcs7hn65rc-o-r-n-a jcs7hn65r dpak no reel 0.30 g(typ) JCS7HN65Cc-o-c-n-b JCS7HN65C to-220c no tube 2.15 g(typ) jcs7hn65fc-o-f-n-b jcs7hn65f to-220mf no tube 2.20 g(typ) jcs7hn65sc-o-s-n-b jcs7hn65s to-263 no tube 1.37 g(typ) jcs7hn65sc-o-s-n-a jcs7hn65s to-263 no reel 1.37 g(typ) jcs7hn65bc-o-b-n-b jcs7hn65b to-262 no tube 1.71 g(typ) jcs7hn65fc-o-f2-n-b jcs7hn65f to-220mf-k2 no tube 1.78 g(typ) jcs7hn65fc-o-f1-n-b jcs7hn65f to-220mf-k1 no tube 1.78 g(typ) ? main characteristics i d 7.0 a v dss 650 v rdson-max @vgs=10v 1.35 ? qg-typ 32 nc ? z ??? z z led ? applications z high frequency switching mode power supply z electronic ballast z led ? z ? z c rss ( ? 14pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 14pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message ? package
r JCS7HN65C 201604i 2/18 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs7hn65 cc/sc/bc/vc/rc jcs7hn6 5fc jcs7hn65 fc-k1/k2 unit ???? drain-source voltage v dss 650 650 v 7.0 7.0* a ? drain current -continuous i d t=25 t=100 4.6 4.6* a ? ? 1 drain current - pulse note 1 i dm 28 28* a ??? gate-source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 710 mj ? ? 1 avalanche current note 1 i ar 7.0 a ?? ? 1 repetitive avalanche energy note 1 e ar 12.6 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 4.5 v/ns 120.0 54.34 43.9 w ? power dissipation p d t c =25 -derate above 25 1.04 0.434 0.35 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r JCS7HN65C 201604i 3/18 electrical characteristics ? parameter symbol tests conditions min typ max units ? off ?characteristics ??? drain-source voltage bv dss i d =250 a, v gs =0v 650 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.64 - v/ v ds =650v,v gs =0v, t c =25 - - 10 a ???? zero gate voltage drain current i dss v ds =520v, t c =125 - - 100 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 - 4.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =3.5a - 1.05 1.35 ? forward transconductance g fs v ds = 40v, i d =7.0a note 4 - 5.6 - s ? dynamic characteristics input capacitance c iss - 1100 1600 pf output capacitance c oss - 251 300 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 14 20 pf
r JCS7HN65C 201604i 4/18 electrical characteristics switching characteristics ?? turn-on delay time t d (on) - 11 31 ns ? turn-on rise time t r - 35 80 ns ?? turn-off delay time t d (off) - 46 95 ns ?? turn-off fall time t f v dd =325v,i d =7a,r g =25 ? note 4 5 - 40 92 ns ? total gate charge q g - 32 41 nc ?? gate-source charge q gs - 6 - nc ?? gate-drain charge q gd v ds =520v , i d =7a v gs =10v note 4 5 - 15 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain -source diode forward current i s - - 7.0 a maximum pulsed drain-source diode forward current i sm - - 28 a ? drain-source diode forward voltage v sd v gs =0v, i s =7.0a - - 1.4 v ?? reverse recovery time t rr - 345 - ns ? reverse recovery charge q rr v gs =0v, i s =7.0a di f /dt=100a/ s (note 4) - 3.2 - c thermal characteristic max ? parameter symbol jcs7hn65vc /rc/cc/sc/bc jcs7hn65fc to-220mf jcs7hn65fc to-220mf-k1/k2 unit ??? thermal resistance, junction to case rth(j-c) 1.04 2.3 2.845 /w ? thermal resistance, junction to ambient r th(j-a) 62.5 35.67 40.25 /w ?? 1 ? 2 l=27mh, i as =7.0a, v dd =50v, r g =25 ? , ? t j =25 3 i sd 7.0a,di/dt 300a/ s,vdd bv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=27mh, i as =7.0a, v dd =50v, r g =25 ? ,starting t j =25 3 i sd 7.0a,di/dt 300a/ s,vdd bv dss , starting t j =25 4 pulse test pulse width 300 s,duty cycle 2 5 essentially independent of operating temperature
r JCS7HN65C 201604i 5/18 electrical characteristics (curves) 110 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250 s pulse test 2. t c =25 i d [a] v ds [v] 246810 0.1 1 10 notes 1.250 s pulse test 2.v ds =40v 25 i d [a] v gs [v] 150 0123456 0.8 1.0 1.2 note t j =25 v gs =10v v gs =20v r ds (on) [ ? ] i d [a] on-region characteristics transfer characteristics on-resistance variation vs. drain current and gate voltage body diode forward voltage v ariation vs. source current and temperature capacitance characteristics gate charge characteristics 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 notes 1. 250 s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a]
r JCS7HN65C 201604i 6/18 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v g s =0v 2. i d =250 a bv ds (normalized) t j [ ] breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum safe operating area for jcs7hn65fc ( to-220mf ) maximum safe operating area for JCS7HN65Cc/sc/bc/rc/vc maximum safe operating area for jcs7hn65fc ( to-220mf-k1/k2 )
r JCS7HN65C 201604i 7/18 electrical characteristics (curves) maximum drain current vs. case temperature transient thermal response curve for JCS7HN65Cb/sb/bb/rc/vc transient thermal response curve for jcs7hn65fc avalanche energy vs. temperature
r JCS7HN65C 201604i 8/18 transient thermal response curve for jcs7hn65fc(to-220mf-k1/k2)
r JCS7HN65C 201604i 9/18 ? package mechanical data ipak unit mm
r JCS7HN65C 201604i 10/18 ? package mechanical data ipak-s2 unit mm
r JCS7HN65C 201604i 11/18 ? package mechanical data dpak reel unit mm
r JCS7HN65C 201604i 12/18 ? package mechanical data to-220c unit mm
r JCS7HN65C 201604i 13/18 ? package mechanical data to-220mf unit mm
r JCS7HN65C 201604i 14/18 ? package mechanical data to-262 unit mm
r JCS7HN65C 201604i 15/18 ? package mechanical data to-263 reel unit mm
r JCS7HN65C 201604i 16/18 ? package mechanical data to-220mf-k2 unit mm
r JCS7HN65C 201604i 17/18 ? package mechanical data to-220mf-k1 unit mm
r JCS7HN65C 201604i 18/18 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533

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